The 10th International Symposium on SIMS
and Related Techniques Based on Ion-Solid Interactions
at Seikei University (SISS-10)

Scope: SISS-10 will cover SIMS and related techniques based on ion-solid interactions: fundamentals, instrumentation, and application in various fields, such as semiconductors, industrial materials, biological, medical, and environmental sciences. This symposium will be held as a post-conference of SIMS-XVI. In this time, we will have mainly three sessions: Atom Probe, D-SIMS, and TOF-SIMS.
Date: July 17-18, 2008 10:00-17:00
Place: Meeting Room on the 4th floor, University Building #14, Seikei University
(Social meeting: July 17, 2008 17:20-19:00, Hall on the 12th floor, University Building #10)

Access to Seikei University in Tokyo

All invited and contributed presenters are expected to write abstract paper. Digital file (MS-Word file) should be sent by e-mail to the Program coordinator (Mitsuhiro Tomita), no later than June 13th, 2008. The abstract should be accompanied by a cover letter stating the title, name, address, e-mail address. The format requires A4 page (No page limitation).
     2,000 Yen (including social meeting fee)
Contact us: Program coordinator Dr. Mitsuhiro Tomita (TOSHIBA)


  Organizing Committee
Chair: Masahiro Kudo Seikei University
Atsushi Murase Toyota Central R&D Labs.
  Program Coordinators
Mitsuhiro Tomita Toshiba
Masashi Nojima Tokyo University of Science
Manabu Komatsu Canon
  Technical Advisor
Teiichiro Kono Asahi Kasei
Nobuhiko Kato Seikei University
  Finance & Editorial Coordinators
Akio Takano NTT-AT
Mineharu Suzuki ULVAC-PHI